40 Gb/s PAM-4 transmitter IC for long-wavelength VCSEL links

Conventional 850 nm multimode fiber links deployed in warehouse-scale data centers will be limited by modal dispersion beyond 10 Gb/s when covering distances up to 1 km. This can be resolved by opting for a single-mode fiber (SMF), but typically requires the use of power-hungry edge-emitting lasers. We investigate the feasibility of a high-efficiency SMF link by reporting a 0.13 mu m SiGe BiCMOS laser diode driver optimized for long-wavelength vertical-cavity surface-emitting lasers (VCSELs). Bit-error rate experiments at 28 and 40 Gb/s up to 1 km of SMF reveal that four-level pulse amplitude modulation can compete with non-return-to-zero in terms of energy efficiency and scalability. With 9.4 pJ/b, the presented transmitter paves the way for VCSEL-based SMF links in data centers

Electronic structure and optoelectronic properties of strained InAsSb/GaSb multi quantum wells

A study of the optical properties of a set of InAsxSb1-x/Al0.15In0.85As0.77Sb0.23/GaSb multiple quantum-wells (for x between 0.82 and 0.92) with build-in strains in the -0.62% to +0.05%-range is presented. The energy of the lowest quantum-confined optical transition is calculated by kp perturbation theory and experimentally determined by absorption measurements. Stokes shift of photoluminescence, photocurrent and of the emission from light emitting devices against the absorption edge of the quantum-well are quantified. The impact of the decreasing carrier confinement in the InAsxSb1-x quantum well system with increasing mole fraction is analyzed theoretically, and experimentally demonstrated by photoluminescence measurement. Our results allow for the improvement of optoelectronic devices, in particular for tailoring emission spectra of light emitting diodes

Widely tunable 23 μm III-V-on-silicon Vernier lasers for broadband spectroscopic sensing

Heterogeneously integrating III-V materials on silicon photonic integrated circuits has emerged as a promising approach to make advanced laser sources for optical communication and sensing applications. Tunable semiconductor lasers operating in the 2-2.5 mu m range are of great interest for industrial and medical applications since many gases (e.g., CO2, CO, CH4) and biomolecules (such as blood glucose) have strong absorption features in this wavelength region. The development of integrated tunable laser sources in this wavelength range enables low-cost and miniature spectroscopic sensors. Here we report heterogeneously integrated widely tunable III-V-on-silicon Vernier lasers using two silicon microring resonators as the wavelength tuning components. The laser has a wavelength tuning range of more than 40 nm near 2.35 mu m. By combining two lasers with different distributed Bragg reflectors, a tuning range of more than 70 nm is achieved. Over the whole tuning range, the side-mode suppression ratio is higher than 35 dB. As a proof-of-principle, this III-V-on-silicon Vernier laser is used to measure the absorption lines of CO. The measurement results match very well with the high-resolution transmission molecular absorption (HITRAN) database and indicate that this laser is suitable for broadband spectroscopy. (C) 2018 Chinese Laser Pres